Modeling and Simulation III

Models are increasingly being incorporated into real-time control algorithms for plasma reactors in the semiconductor industry. However, this integration is not straightforward. Due to the high complexity of these reactors, accurate simulations often require time consuming two- or three- dimensional models, making them unsuitable for real-time control. In this work, we developed a 0.5D global model for asymmetric single- and dual- frequency capacitively coupled plasmas (CCPs) implemented within the 0-D GlobalKin framework.  The model provides average species densities and source functions (the 0-D component), and the time-dependent potential profile across the electrode gap (the 1-D component), which can be used as input to a Monte Carlo model for ion energy and angular distributions arriving on the substrate. GlobalKin results were benchmarked against the 2D Hybrid Plasma Equipment Model (HPEM) for argon mixtures with electronegative gases (Cl₂ or CF_x), across a range of pressures (20-200 mTorr), voltages and frequencies. Overall, the 0.5D model accurately predicts species densities and the asymmetry in the potential profile using only a few tuning parameters. GlobalKin simulations complete in a few seconds on a single core, whereas the 2D simulations require several hours. 

Funding acknowledgement

This work was supported by Tokyo Electron Ltd., Samsung Electronics Inc. and Department of Energy Fusion Energy Sciences (SC-00274510).