Modeling and Simulation IV

Low-temperature radio-frequency (RF) plasmas, including Capacitively Coupled Plasmas (CCPs) and Inductively Coupled Plasmas (ICPs), are foundational to high-tech industries. Optimizing their performance for applications like semiconductor manufacturing necessitates a profound understanding of the complex, nonlinear interplay between plasma dynamics, external electrical circuits, and impedance matching networks (IMNs). We present recent advancements in developing and applying comprehensive numerical models to unravel these interactions. We have established robust self-consistent frameworks coupling Particle-in-Cell/Monte Carlo collision (PIC/MCC) and fluid plasma models, often in 2D axisymmetric configurations, with detailed representations of external circuits. Key methodological advancements include the development of generalized external circuit models, efficient 2D axisymmetric particle control, and diverse IMN optimization techniques (iterative, extremum-seeking, ML-based).

Applying these advanced simulation frameworks, we have extensively investigated CCPs (1D/2D PIC/MCC) to characterize nonlinear dynamics such as intermodulation/PSR in DFCCPs and circuit-induced oscillations, as well as breakdown and stability. This includes designing and optimizing IMNs for various CCPs (single/multi-frequency, TVW), revealing crucial circuit and matching impacts on plasma properties, heating modes, and IMN saddle points. Furthermore, our 2D PIC/MCC modeling of ICPs elucidates RF bias effects on plasma characteristics (density, EEDF, IEDF) and the E-H mode transition, identifying critical power regimes, density/EEPF shifts, and the interplay of capacitive/inductive heating which affects plasma uniformity and stability.

Funding acknowledgement

This work was supported by the National Natural Science Foundation of China (12275095, 11975174 and 12011530142).