Plasma Etching III
Ion Energy Distribution Function (IEDF) Simulation Applicable to Customized Bias Voltage Waveform
3:15 pm – 3:30 pmPrecise control of the ion energy distribution function (IEDF) is essential for minimizing plasma induced damage and improving selectivity in plasma processing. Among various strategies, waveform engineering of the substrate voltage is widely used to modulate the IEDF. We present a user-customizable IEDF simulation framework capable of handling both sinusoidal and arbitrarily tailored voltage waveforms, offering users physical insight into waveform-driven ion dynamics. The model incorporates calculation of sheath and an ion motion, enabling simulations to complete in under one minute. The resulting IEDF trends show consistent IEDF trends with changes in electron temperature, plasma density, and driving frequency, in agreement with previous studies. The reliability of the proposed simulation framework was validated and further demonstrated by successfully generating a mono-energetic IEDF through a tailored voltage waveform, offering practical insight into waveform-based plasma process optimization.
- 2:00 pm – 2:15 pmPlasma sheath tailoring for advanced 3D plasma etching: the effects of mask geometry, etching materials, and ion energy.
Elia Jüngling (presenter), Meret Nürnberg, Gerardo Emiliano Gutierrez Alvarez, Marc Böke, Achim von Keudell
- 2:15 pm – 2:30 pmDeep Potential Molecular Dynamics Simulations of Ion-Enhanced Etching of Silicon by Atomic Chlorine
Andreas Kounis-Melas (presenter), Athanassios Z Panagiotopoulos, David Barry Graves
- 2:30 pm – 2:45 pmAtomic layer etching of sputter-deposited AlN in Cl2-Ar plasmas
Iurii Nesterenko (presenter), Jon Farr, Steffen Harzenetter, Dmytro Solonenko, Benjamin Kalas, Thang Dao, Julian Schulze, Nikolai Andrianov
- 2:45 pm – 3:00 pmModeling and optimization of plasma chemical etching of polysilicon in HBr/Cl2 mixture with data-driven approaches
Fedor V Oksanichenko (presenter), Alexander Efremov
- 3:00 pm – 3:15 pmThe effect of quenching process for the argon excited states in plasma etching
Lu Wang (presenter)
- 3:15 pm – 3:30 pmIon Energy Distribution Function (IEDF) Simulation Applicable to Customized Bias Voltage Waveform
HyeonHo Nahm (presenter), Chin-Wook Chung