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Inductively Coupled Plasmas

2:00 pm – 4:30 pm, Tuesday October 14 Session GT3 COEX, Room E5
Chair:
Li Wang, Ruhr University Bochum
Topics:

PIC/MCC simulations of the effects of a radio-frequency bias on inductively coupled plasmas

3:15 pm – 3:30 pm
Presenter: Xiandi Li (School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China)
Authors: Zhaoyu Chen (School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China), Zili Chen (School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China), Yu Wang (School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China), Minglun Tian (School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China), Hongyu Wang (School of Physics Science and Technology, Anshan Normal University, Anshan, 114007, China), Zhipeng Chen (School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China), Li Wang (Ruhr University Bochum), Wei Jiang (School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China), Julian Schulze (Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany), Ya Zhang (Department of Mathematics, Wuhan University of Technology, Wuhan, 430070, China)

Many plasma processing applications require precise RF bias control. In this study a 2D Particle-in-cell/Monte Carlo Collisions  model of Inductively coupled plasmas (ICP) with complex electrode geometry and RF bias is validated against experimental measurements performed in a GEC reference cell. The results show that the RF bias nonlinearly reduces the plasma density while shifting the Electron energy probability distribution function (EEPF) to lower energies and transforming the Ion energy and angular distribution function (IEADF) from a single to a double peak structure with a narrow angular distribution. Furthermore, we confirm and explain three experimentally observed ICP-CCP coupling mechanisms[1] that potentially limit independent control of ion flux and energy: Even at high ratios of the inductively (PICP) and capacitively (PCCP) applied powers, Pccp significantly affects the EEPF through sheath heating, demonstrating its nonnegligible influence on plasma density and ion flux; PICP modifies the voltage drop across the sheath at fixed PCCP and, thus, the IEADF, since increasing PICP raises the plasma current, thereby reducing the sheath voltage. PICP alters the frequency and damping characteristics of plasma series resonance (PSR) oscillations of the RF current. The simulation results show good experimental agreement and advance understanding of ICP-CCP coupling.

[1] Schulze J et al. APL. 100, 024102 (2012).

Funded by NSFC (12275095, 11975174, 12011530142) and DFG (428942393).

Funding acknowledgement

Funded by NSFC (12275095, 11975174, 12011530142) and DFG (428942393).

PRESENTATIONS (9)