Plasma Semiconductor Applications
9:00 am – 10:30 am,
Tuesday October 14 Session DT1 COEX, Room E1
The effect of cryogenic substrate cooling on electron energy distribution in inductively coupled plasma
9:00 am – 9:15 amPresenter: JONGHA AHN (Department of Electrical Engineering, Hanyang University)
Authors: DEOKHWAN KIM (Department of Electrical Engineering, Hanyang University), Chinwook Chung (Hanyang University)
Collaboration: Jong-Ha Ahn1, Deok-Hwan Kim1, Chin-Wook Chung1*
Cryogenic etching processes employing substrate cooling below -100°C exhibit distinct plasma characteristics compared to conventional conditions. This study investigates electron energy probability function (EEPF) transitions in inductively coupled plasma (ICP) under cryogenic substrate cooling by single Langmuir probe measurement. While pressure-dependent EEPF transitions from bi-Maxwellian to Maxwellian distributions are observed at 40°C, EEPFs at -100°C show suppression of this transition at -100°C. Substrate cooling induces cooling of neutral gas, increasing electron-neutral collisions and preventing formation of bi-Maxwellian distributions. Measurements across 2–90 mTorr reveal persistent Maxwellian EEPFs under cryogenic conditions, contrasting with pressure-driven transitions observed at 40°C. This effect is also observed in ICP E-mode which is a capacitively discharged dominant regime.
Variations of electron density and electron temperature confirm the EEPF distribution changes. These findings suggest that substrate temperature control represents an additional parameter for manipulating plasma characteristics in plasma processing environments.
Funding acknowledgement
1 Department of Electrical Engineering, Hanyang UniversityTel: 02‐2220‐0344, E‐mail: ahn1233@hanyang.ac.kr
PRESENTATIONS (5)
- 9:00 am – 9:15 amThe effect of cryogenic substrate cooling on electron energy distribution in inductively coupled plasma
JONGHA AHN (presenter), DEOKHWAN KIM, Chinwook Chung
- 9:15 am – 9:30 amDevelopment of a Transformer-Coupled Plasma Source with Enhanced Radical Delivery and Plasma Ignition for Next-Generation Plasma Processing
Jaehoon Choi (presenter), Tae S Cho
- 9:30 am – 9:45 amDevelopment of a High-Pressure Compatible Self Plasma-Optical Emission Spectrometer for Real-Time Plasma Process Monitoring
Geon Woong Eom (presenter), SangHo Lee, InYong Park, Woo Seok Kang, Min Hur, Dae-Woong Kim
- 9:45 am – 10:00 amTunable antenna array for large area microwave plasma source for semiconductor manufacturing
Giwon Shin (presenter), Jaehoon Choi, Sooyoung Hwang, Jeonghun Kim, Hakmin Kim, Minhee Lee, Tae S Cho, Hyunho Yun
- 10:00 am – 10:30 amBeamline pressure effect on ion beam transport in ion implanters
John (Bon-Woong) Koo (presenter), Frank Sinclair, Paul Murphy