Plasma Semiconductor Applications

The relentless scaling in semiconductor device fabrication, characterized by sub-10 nm nodes, 3D integration, and gate-all-around (GAA) architectures, necessitates plasma sources capable of generating high radical densities across broad pressure regimes while minimizing ion-induced substrate damage. To address these challenges, we developed a novel ignitor-free, transformer-coupled remote plasma source. We optimized the reactor geometry to enable efficient radical transport across large areas, significantly enhancing radical delivery efficiency and spatial uniformity. This improvement is crucial for high-throughput processing in next-generation semiconductor applications. However, plasma ignition with electronegative gases in TCP sources typically requires high breakdown voltages, often necessitating the use of inert gases like argon for initial ignition, which reduces process efficiency and throughput. To overcome this, we integrated an ignition coil with ferrite cores, connecting its terminals to reactors on both sides. The induced current in this coil generated an additional electric field, improving ignition performance. This enabled stable plasma ignition across a wider range of gas mixtures, eliminating the need for inert gas pre-ignition and significantly reducing ignition delay. This capability is particularly advantageous for plasma processes requiring precise gas control and rapid cycling, such as atomic layer deposition (ALD) and atomic layer etching (ALE).