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Poster Session I

4:30 pm – 6:30 pm, Tuesday October 14 Session DT4 COEX, Lobby E
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A physics-based simulation framework for ion transport and surface interaction analysis in high-aspect ratio etching

Poster 53
Presenter: Do Hun Lee (Ulsan National Institute of Science and Technology)
Authors: Jun Pyo Hong (Ulsan National Institute of Science and Technology), Youngmin Sunwoo (Ulsan National Institute of Science and Technology), Semin Kim (Ulsan National Institute of Science and Technology), Taeyoung Kim (Ulsan National Institute of Science and Technology), Byungjo Kim (Ulsan National Institute of Science and Technology)

As the growth of the semiconductor industry accelerates, a precise understanding of ion-surface interactions within high aspect ratio (HAR) structures is essential. In particular, in the HAR etching process, complex physical behaviors such as ion scattering, energy transfer, and trajectory develop nonlinearly depending on the patterning characteristics within the structure, which is a key factor that makes accurate prediction and control of the etching process difficult.

In this study, molecular dynamics (MD) simulations were performed to theoretically elucidate the physical mechanisms of ion collision behavior in this process. The scattering characteristics and energy-angle distributions (EADs) for single bombardments were analyzed. Based on this data, a collision-based probability model was trained in a deep neural network (DNN) to build an AI-based encoding structure that can predict the physics-based probability distribution of ion-surface interactions.

The probability distribution function predicted by the DNN is then applied to a kinetic monte carlo (KMC) simulator, which is configured to dynamically track the ion trajectory, energy loss, sidewall collision frequency, and energy transfer as a function of position inside the trench. We propose a physics-based simulation framework to quantitatively analyze how ion transport pathways and energy transport properties change with structure under different HAR conditions.

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