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Poster Session I

4:30 pm – 6:30 pm, Tuesday October 14 Session DT4 COEX, Lobby E
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Measurement of Plasma Density Using a Electrode Sensor on Wafer in an Inductively Coupled Plasma and Comparison with Other Diagnostic Methods

Poster 95
Presenter: Hee Sam Cheon (KwangWoon University)
Authors: JiHwan Kim (Kwangwoon University), In Young Bang (Kwangwoon university), JaeHyeon Kim (Kwangwoon University), ChangHee Lee (KwangWoon University), GwangHo Lee (Kwangwoon University), HyoJong Shin (Kwangwoon University), YoonJoo Jeong (Kwangwoon University), InHyeok Kho (Kwangwoon University), Yejun Cheon (Kwangwoon University), GaEun Hwang (Kwangwoon University), YuJin Heo (Kwangwoon University), GiChung Kwon (Kwangwoon University)
Collaboration: KwangWoon University

In advanced semiconductor manufacturing processes, increasing device integration demands ultra-fine processing and improved yield. To meet these requirements, precise control of plasma processes has become increasingly important, particularly with regard to measuring plasma density, which is a key parameter. Currently, the Langmuir probe is widely used for plasma density measurements. However, this method involves inserting the probe directly into the plasma, which causes plasma perturbation, thereby limiting the accuracy and reproducibility of the measurements.

 

In this study, we employed a electrode sensor on wafer, which minimizes plasma perturbation by integrating the sensor into the wafer itself. The sensor was installed inside an Inductively Coupled Plasma(ICP) chamber, and argon gas was used as the process gas. Plasma was generated by varying the process pressure and applied Radio Frequency(RF) power. Using the electrode sensor on wafer, plasma density was measured directly on the substrate surface and compared with measurements obtained using a single Langmuir probe.

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