Schedule Logo

Poster Session I

4:30 pm – 6:30 pm, Tuesday October 14 Session DT4 COEX, Lobby E
Topics:
PrevNext

Real-time temperature monitoring of wafer and focus ring during plasma processing

Poster 93
Presenter: JaeHyeon Kim (Kwangwoon University)
Authors: JiHwan Kim (Kwangwoon University), InYoung Bang (Kwangwoon University), GwangHo Lee (Kwangwoon University), ChangHee Lee (KwangWoon University), HyoJong Shin (Kwangwoon University), InHyeok Kho (Kwangwoon University), YoonJoo Jeong (Kwangwoon University), YuJin Heo (Kwangwoon University), HeeSam Cheon (Kwangwoon University), GaEun Hwang (Kwangwoon University), Yejun Cheon (Kwangwoon University), GiChung Kwon (Kwangwoon University)
Collaboration: Kwangwoon University

As the demand for high performance and smaller devices, semiconductor technology has advanced. For example, the size of memory devices has shrunk. To increase the density and storage per unit space, the cell pitch scale down less than 40 nm in DRAM or 3D NAND devices and High Aspect Ratio(HAR), 3D structure has developed. For making these complex structures, advanced technologies of etching and deposition in atomic layer scale are needed. One of the advanced technologies, cryogenic etching is widely studied to make the HAR structure. Furthermore, to achieve excellent process uniformity across the wafer, precise control of temperature, plasma and other techniques is essential.

However, the etching and deposition characteristics at the center of wafer are different from the edge of wafer due to the un-uniformity of plasma and wafer temperature. The temperature difference of wafer and chamber parts such as focus ring can affect the temperature uniformity at wafer edge.

In this study, the temperature of wafer and alumina focus ring was monitored in 6 inch Inductively Coupled Plasma(ICP) chamber in real-time. The temperature of focus ring was measured with Fiber Bragg Grating(FBG) sensor and wafer temperature was measured with fiber optic probe.  The wafer temperature was adjusted -60℃ to 20℃ by using a cryogenic chiller. The pressure was fixed at 10 mTorr. The RF power condition, 300 W to 700 W, was applied with 13.56 MHz RF generator.

Funding acknowledgement

This work was supported by the Technology Innovation Program (RS-2023-00237548, Development of Cryogenic Atomic Layer Etching Process and Equipment for next generation semiconductor device below 100Å) through the Korea Planning & Evaluation Institute of Industrial Technology(KEIT) funded by the Ministry of Trade, Industry & Energy(MOTIE, Korea).

POSTERS (97)